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Concentrated chloride-based epitaxial growth of 4H-SiC
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5768-0244
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2010 (English)In: Materials Science Forum, Vols. 645-648, Transtec Publications; 1999 , 2010, Vol. 645-648, 95-98 p.Conference paper, Published paper (Refereed)
Abstract [en]

A chloride-based CVD process has been studied in concentrated growth conditions. A systematic study of different carrier flows and pressures has been done in order to get good quality epilayers on 8 degrees off and on-axis substrates while using very low carrier flows. Hydrogen chloride (HCl) was added to the standard gas mixture to keep a high growth rate and to get homo-polytypic growth on on-axis substrates. The carrier flow was reduced down to one order of magnitude less than under typical growth condition. By lowering the process pressure it was possible to reduce precursor depletion along the susceptor which improved the thickness uniformity to below 2% variation (sigma/mean) over a 2 diameter wafer.

Place, publisher, year, edition, pages
Transtec Publications; 1999 , 2010. Vol. 645-648, 95-98 p.
Keyword [en]
chloride-based CVD; concentrated growth; high growth rate
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-58205DOI: 10.4028/www.scientific.net/MSF.645-648.95ISI: 000279657600021OAI: oai:DiVA.org:liu-58205DiVA: diva2:338124
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ICSCRM2009
Available from: 2010-08-10 Created: 2010-08-09 Last updated: 2014-10-08

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Henry, AnneLeone, SteffanoKordina, OlleJanzén, Erik

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