Growth and properties of SiC on-axis homoepitaxial layers
2010 (English)In: ICSCRM 2009, Trans Tech Publications , 2010, Vol. 645-648, 83-88 p.Conference paper (Refereed)
Homoepitaxial growth has been performed on 3 Si-face on-axis 4H-SiC substrates using standard gas system in a horizontal Hot-wall chemical vapor deposition system. Substrate surface damages are found to act as preferential nucleation sites for 3C inclusions also, the surface morphology after in-situ etching is found to largely influence the polytype stability in the epilayer. Different in-situ etching conditions were studied where Si-rich conditions are found to be better. Growth parameters and starting growth conditions are refined to obtain stable polytype in the epilayer. High quality homoepitaxial layers with 100% 4H-SiC are obtained on 3 substrates. Different optical and structural techniques are used to characterize the layers and to understand the growth mechanisms. The layers are found to be of high quality and no epitaxial defects typically found on off-axis epitaxial layers are observed. A high surface roughness is observed in these layers, however higher growth rate significantly lowers the surface roughness without affecting the polytype stability in the epilayer.
Place, publisher, year, edition, pages
Trans Tech Publications , 2010. Vol. 645-648, 83-88 p.
, Materials Science Forum, ISSN 0255-5476
on-axis epitaxy; basal plane dislocations; high growth rate; graphene; growth mechanism
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-58204DOI: 10.4028/www.scientific.net/MSF.645-648.83ISI: 000279657600019OAI: oai:DiVA.org:liu-58204DiVA: diva2:338126