Optically pumped lasing at 300.4 nm in AlGaN MQW structures grown by plasma-assisted molecular beam epitaxy on c-Al2O3
2010 (English)In: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, ISSN 1862-6300, Vol. 207, no 6, 1313-1317 p.Article in journal (Refereed) Published
We have demonstrated optically pumped room-temperature pulse lasing at 300.4 nm from an AlGaN-based multiple-quantum-well (MQW) structure grown by plasma-assisted molecular beam epitaxy on a c-sapphire substrate. The lasing was achieved at the threshold peak power of similar to 12 MW/cm(2). The MQW structure involved AlGaN/AlN short-period super-lattices to decrease the threading dislocation densities from 10(11) down to 10(9)-10(10) cm(-2). Studies of time-resolved photoluminescence (TRPL) spectra and cw PL temperature dependences (10-300K) of different MQW structures, as well as numerical calculations of the optical gain and confinement in the laser structure allowed us to conclude about the optimum design of AlGaN-based MQW structures for the lower threshold UV lasing.
Place, publisher, year, edition, pages
WILEY-V C H VERLAG GMBH , 2010. Vol. 207, no 6, 1313-1317 p.
AlGaN; dislocations; laser; MBE; photoluminescence; quantum wells
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-58183DOI: 10.1002/pssa.200983612ISI: 000279989000010OAI: oai:DiVA.org:liu-58183DiVA: diva2:342891