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Optically pumped lasing at 300.4 nm in AlGaN MQW structures grown by plasma-assisted molecular beam epitaxy on c-Al2O3
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2010 (English)In: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, ISSN 1862-6300, Vol. 207, no 6, 1313-1317 p.Article in journal (Refereed) Published
Abstract [en]

We have demonstrated optically pumped room-temperature pulse lasing at 300.4 nm from an AlGaN-based multiple-quantum-well (MQW) structure grown by plasma-assisted molecular beam epitaxy on a c-sapphire substrate. The lasing was achieved at the threshold peak power of similar to 12 MW/cm(2). The MQW structure involved AlGaN/AlN short-period super-lattices to decrease the threading dislocation densities from 10(11) down to 10(9)-10(10) cm(-2). Studies of time-resolved photoluminescence (TRPL) spectra and cw PL temperature dependences (10-300K) of different MQW structures, as well as numerical calculations of the optical gain and confinement in the laser structure allowed us to conclude about the optimum design of AlGaN-based MQW structures for the lower threshold UV lasing.

Place, publisher, year, edition, pages
WILEY-V C H VERLAG GMBH , 2010. Vol. 207, no 6, 1313-1317 p.
Keyword [en]
AlGaN; dislocations; laser; MBE; photoluminescence; quantum wells
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-58183DOI: 10.1002/pssa.200983612ISI: 000279989000010OAI: diva2:342891
Available from: 2010-08-11 Created: 2010-08-09 Last updated: 2010-08-11

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Monemar, Bo
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ReferencesLink to record
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