Industrial-scale deposition of highly adherent CNx films on steel substrates
2010 (English)In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 204, no 21-22, 3349-3357 p.Article in journal (Refereed) Published
Highly adherent carbon nitride (CNx) films were deposited using a novel pretreatment with two high power impulse magnetron sputtering (HIPIMS) power supplies in a master-slave configuration: one to establish the discharge and one to produce a pulsed substrate bias. During the pretreatment, SKF3 (AISI 52100) steel substrates were pulse-biased in the environment of a HIPIMS Cr plasma in order to sputter clean the surface and to implant Cr metal ions. Subsequently. CNx films were prepared at room temperature by DC unbalanced magnetron sputtering from a high purity graphite target in a N-2/Ar discharge at 3 mTorr. All processing was done in an industrial CemeCon CC800 system. A series of depositions were obtained with samples at different bias voltages (DC and pulsed) in the range of 0-800 V. Scanning transmission microscopy (STEM) and high resolution transmission electron microscopy (HRTEM) show the formation of an interface comprising a polycrystalline Cr layer of 100 nm and an amorphous transition layer of 5 nm. The adhesion of CNx films evaluated by the Daimler-Benz Rockwell-C reach strength quality HF1, and the scratch tests gives critical loads of 84 N. Adhesion results are correlated to the formation of an optimal interfacial mixing layer of Cr and steel.
Place, publisher, year, edition, pages
Elsevier Science B.V., Amsterdam. , 2010. Vol. 204, no 21-22, 3349-3357 p.
Carbon nitride; HIPIMS; HPPMS; Adhesion; CNx
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-58178DOI: 10.1016/j.surfcoat.2010.03.038ISI: 000279696400001OAI: oai:DiVA.org:liu-58178DiVA: diva2:342898
Esteban Broitman, Zs. Czigany, Grzegorz Greczynski, J. Bohlmark, R. Cremer and Lars Hultman, Industrial-scale deposition of highly adherent CNx films on steel substrates, 2010, Surface & Coatings Technology, (204), 21-22, 3349-3357.
Copyright: Elsevier Science B.V., Amsterdam.