Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors
2010 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 108, no 1, 014508- p.Article in journal (Refereed) Published
Capacitance-voltage [C(V)] measurements of metal-insulator-semiconductor-heterostructure capacitors are used to investigate the interface between silicon nitride passivation and AlGaN/AlN/GaN heterostructure material. AlGaN/AlN/GaN samples having different silicon nitride passivating layers, deposited using three different deposition techniques, are evaluated. Different interface state distributions result in large differences in the C(V) characteristics. A method to extract fixed charge as well as traps from the C(V) characteristics is presented. Rough estimates of the emission time constants of the traps can be extracted by careful analysis of the C(V) characteristics. The fixed charge is positive for all samples, with a density varying between 1.3 x 10(12) and 7.1 x 10(12) cm(-2). For the traps, the peak density of interface states is varying between 16 x 10(12) and 31 x 10(12) cm(-2) eV(-1) for the three samples. It is concluded that, of the deposition methods investigated in this report, the low pressure chemical vapor deposited silicon nitride passivation shows the most promising results with regards to low densities of interface states.
Place, publisher, year, edition, pages
American Institute of Physics , 2010. Vol. 108, no 1, 014508- p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-58167DOI: 10.1063/1.3428442ISI: 000280000400098OAI: oai:DiVA.org:liu-58167DiVA: diva2:342925
M. Fagerlind, F. Allerstam, E.O. Sveinbjornsson, N. Rorsman, Anelia Kakanakova-Gueorguie, Anders Lundskog, Urban Forsberg and Erik Janzén, Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors, 2010, Journal of Applied Physics, (108), 1, 014508.
Copyright: American Institute of Physics