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Electron-poor antimonides: complex framework structures with narrow band gaps and low thermal conductivity
Arizona State University.
Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics . Linköping University, The Institute of Technology.
2010 (English)In: Dalton Transactions, ISSN 1477-9226, E-ISSN 1477-9234, Vol. 39, no 4, 1036-1045 p.Article in journal (Refereed) Published
Abstract [en]

Binary zinc and cadmium antimonides and their ternary relatives with indium display complex crystal structures, but reveal at the same time narrow band gaps in their electronic structure at or close to the Fermi level. It is argued that these systems represent "electron-poor framework semiconductors" (EPFS) with average valence electron concentrations between three and four. EPFS materials constituted of metal and semimetal atoms form a common, weakly polar framework containing multi-center bonded structural entities. The localized multi-center bonding feature is thought to be the key to structurally complex semiconductors. In this respect electron-poor antimonides become related to modifications of elemental boron. Electron-poor antimonides show promising thermoelectric properties, especially through a remarkably low thermal conductivity. At the same time the thermal stability of these compounds is rather limited because of temperature polymorphism and/or comparatively low melting or decomposition temperatures ( usually below 600 K).

Place, publisher, year, edition, pages
Royal Society of Chemistry , 2010. Vol. 39, no 4, 1036-1045 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-58483DOI: 10.1039/b915724gISI: 000273518400009OAI: oai:DiVA.org:liu-58483DiVA: diva2:342985
Available from: 2010-08-11 Created: 2010-08-11 Last updated: 2017-12-12

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Mikhaylushkin, Arkady

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