GaN Substrates for III-Nitride Devices
2010 (English)In: Proceedings of the IEEE, ISSN 0018-9219, Vol. 98, no 7, 1324-1338 p.Article in journal (Refereed) Published
Despite the rapid commercialization of III-nitride semiconductor devices for applications in visible and ultraviolet optoelectronics and in high-power and high-frequency electronics, their full potential is limited by two primary obstacles: i) a high defect density and biaxial strain due to the heteroepitaxial growth on foreign substrates, which result in lower performance and shortened device lifetime, and ii) a strong built-in electric field due to spontaneous and piezoelectric polarization in the wurtzite structures along the well-established  growth direction for nitrides. Recent advances in the research, development, and commercial production of native GaN substrates with low defect density and high structural and optical quality have opened opportunities to overcome both of these obstacles and have led to significant progress in the development of several opto-electronic and high-power devices. In this paper, the recent achievements in bulk GaN growth development using different approaches are reviewed; comparison of the bulk materials grown in different directions is made; and the current achievements in device performance utilizing native GaN substrate material are summarized.
Place, publisher, year, edition, pages
IEEE Institute of Electrical and Electronics , 2010. Vol. 98, no 7, 1324-1338 p.
Ammonothermal growth; doping; gallium nitride (GaN); heterostructure field-effect transistor (HFET); hydride vapor phase epitaxy; laser diode (LD); light-emitting diode (LED); native substrates; point defects; Schottky diodes; solution growth; structural defects; surface orientation; thermal conductivity
IdentifiersURN: urn:nbn:se:liu:diva-58340DOI: 10.1109/JPROC.2009.2030699ISI: 000278811800021OAI: oai:DiVA.org:liu-58340DiVA: diva2:343368
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Tanya Paskova, Drew A. Hanser and Keith R. Evans, GaN Substrates for III-Nitride Devices, 2010, Proceedings of the IEEE, (98), 7, 1324-1338.