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Magnetic characterization of conductance electrons in GaN
University of Paderborn.
University of Paderborn.
University of Paderborn.
University of Paderborn.
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2010 (English)In: Physica Status Solidi, Vol. 247, John Wiley and Sons, Ltd , 2010, Vol. 247, no 7, 1728-1731 p.Conference paper, Published paper (Refereed)
Abstract [en]

New electron paramagnetic resonance (EPR) measurements in hexagonal and cubic GaN intentionally doped with silicon are presented. In both type of samples the well-known EPR resonance of the dominant shallow donor is observed, whereby the g-tensors are determined to g(parallel to) = 1.9512, g(perpendicular to) = 1.9485 (free-standing hexagonal GaN) and g = 1.9533 (cubic GaN layer grown on 3C-SiC substrate). The spectra show an exceptionally small line width below 0.4 mT and contain no further signature. As a result, beside the line width itself, the EPR line is characterized by its g-tensor exclusively. With the help of a qualitative analysis of the Si donor wave function within effective mass theory (EMT) and a followed up calculation of the hyperfine (HF) splittings in the framework of density functional theory (DFT) the characteristic shape of the EPR lines can be explained by an enhanced delocalization of the unpaired electrons of shallow Si donors at the gallium sublattice due to overlapping impurity and conduction bands.

Place, publisher, year, edition, pages
John Wiley and Sons, Ltd , 2010. Vol. 247, no 7, 1728-1731 p.
Series
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, ISSN 0370-1972
Keyword [en]
III-V semiconductors, doping, electron paramagnetic resonance
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-58527DOI: 10.1002/pssb.200983582ISI: 000280263700032OAI: oai:DiVA.org:liu-58527DiVA: diva2:343407
Conference
8th International Conference on Nitride Semiconductors
Available from: 2010-08-13 Created: 2010-08-13 Last updated: 2015-09-22

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Nguyen, Tien SonHemmingsson, CarlMonemar, BoJanzén, Erik

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  • apa
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