Spin polarization of neutral excitons in quantum dots: the role of the carrier collection area
2010 (English)In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, NANOTECHNOLOGY, Vol. 21, no 34Article in journal (Refereed) Published
A high degree (approximate to 55%) of circular polarization has been observed for the neutral exciton in InAs/GaAs quantum dots (QDs). The possibility to record non- zero polarization of the neutral exciton is explained in terms of different capture times of the light electron compared with the heavier holes into the QDs from the wetting layer. This interpretation is supported by the progressive reduction of the polarization degree with increasing QD density, and also with increasing temperature.
Place, publisher, year, edition, pages
Institute of Physics , 2010. Vol. 21, no 34
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-58644DOI: 10.1088/0957-4484/21/34/345401ISI: 000280632500009OAI: oai:DiVA.org:liu-58644DiVA: diva2:344890
Evgenii Moskalenko, Arvid Larsson and Per-Olof Holtz, Spin polarization of neutral excitons in quantum dots: the role of the carrier collection area, 2010, NANOTECHNOLOGY, (21), 34, 345501.
Copyright: Institute of Physics; 1999