Reliability study of a low-voltage Class-E power amplifier in 130nm CMOS
2010 (English)In: Proceedings of IEEE International Symposium on Circuits and Systems (ISCAS), Paris, France, IEEE , 2010, 1907-1910 p.Conference paper (Refereed)
This paper presents reliability measurements of a differential Class-E power amplifier (PA) operating at 850MHz in 130nm CMOS. The RF performance of five samples was tested. At 1.1V, the PAs deliver +20.4–21.5dBm of output power with drain efficiencies and power-added efficiencies of 56–64% and 46–51%, respectively. After a continuous long-term test of 240 hours at elevated supply voltage of 1.4V, the output power dropped about 0.7dB.
Place, publisher, year, edition, pages
IEEE , 2010. 1907-1910 p.
CMOS, efficiency, power amplifier, reliability testing
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-58725DOI: 10.1109/ISCAS.2010.5537959ISBN: 978-1-4244-5308-5OAI: oai:DiVA.org:liu-58725DiVA: diva2:345178
IEEE International Symposium on Circuits and Systems (ISCAS), May 30th - June 2nd, Paris, France