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On Epitaxy of Ultrathin Ni1-xPtx Silicide Films on Si(001)
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Fudan University.
Fudan University.
Royal Institute Technology.
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2010 (English)In: ELECTROCHEMICAL AND SOLID STATE LETTERS, ISSN 1099-0062, Vol. 13, no 10, H360-H362 p.Article in journal (Refereed) Published
Abstract [en]

Epitaxial Ni(Pt)Si2-y (y andlt; 1) films readily grow upon thermal treatment of 2 nm thick Ni and Ni0.96Pt0.04 films deposited on Si(001). For annealing at 500 degrees C, the films are 5.4-5.6 nm thick with 61-70 mu cm in resistivity. At 750 degrees C, the epitaxial Ni(Pt)Si2-y films become 6.1-6.2 nm thick with a resistivity of 42-44 mu cm. Structural analysis reveals twins, facet wedges, and thickness inhomogeneities in the films grown at 500 degrees C. For higher temperature, an almost defect-free NiSi2-y film with a flat and sharp interface is formed. The presence of Pt makes the aforementioned imperfections more persistent.

Place, publisher, year, edition, pages
Electrochemical Society and Institute of Electronics Engineers , 2010. Vol. 13, no 10, H360-H362 p.
Keyword [en]
annealing, electrical resistivity, epitaxial layers, nickel compounds, platinum compounds, sputter deposition
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-58785DOI: 10.1149/1.3473723ISI: 000280769700016OAI: oai:DiVA.org:liu-58785DiVA: diva2:345772
Note
Original Publication: Jun Lu, Jun Luo, Shi-Li Zhang, Mikael Ostling and Lars Hultman, On Epitaxy of Ultrathin Ni1-xPtx Silicide Films on Si(001), 2010, ELECTROCHEMICAL AND SOLID STATE LETTERS, (13), 10, H360-H362. http://dx.doi.org/10.1149/1.3473723 Copyright: Electrochemical Society and Institute of Electronics Engineers http://www.electrochem.org/ Available from: 2010-08-27 Created: 2010-08-27 Last updated: 2016-08-31

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