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Radiative recombination of localized excitons and mobility edge excitons in GaInNAs/GaAs quantum wells with strong carrier localization
Chalmers University of Technology.
Chalmers University of Technology.
Chalmers University of Technology.
Chalmers University of Technology.
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2005 (English)In: Physics Letters A, ISSN 0375-9601, Vol. 341, no 04-Jan, 297-302 p.Article in journal (Refereed) Published
Abstract [en]

The radiative recombination in InxGa1-xN0.01As0.99/GaAs quantum well structures exhibiting strong carrier localization was investigated by optical spectroscopy. For In-concentration from 0 to 30%, the results indicate that the degree of carrier localization decreases with increasing In-concentration. At temperatures below 100 K, the mobility edge excitons as well as localized excitons are identified and their transitions energies strongly depend on the excitation intensity. At elevated temperatures the localized excitons become quenched. The temperature dependence of the photoluminescence emission energy shows different behaviors at different excitation intensities.

Place, publisher, year, edition, pages
Elsevier Science B.V., Amsterdam. , 2005. Vol. 341, no 04-Jan, 297-302 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-59226DOI: 10.1016/j.physleta.2005.04.089ISI: 000229945100043OAI: oai:DiVA.org:liu-59226DiVA: diva2:350090
Available from: 2010-09-10 Created: 2010-09-09 Last updated: 2014-01-15

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Zhao, QXWillander, Magnus

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