Atomic force microscope current-imaging study for current density through nanocrystalline silicon dots embedded in SiO2
2005 (English)In: Japanese Journal of Applied Physics, ISSN 0021-4922, E-ISSN 1347-4065, Vol. 44, no 07-Jan, L88-L91 p.Article in journal (Refereed) Published
Simultaneous surface and current imaging through nanocrystalline silicon (nc-Si) dots embedded in SiO2 was achieved using a contact mode atomic force microscope (AFM) under a tip-to-sample bias voltages of about 5 V. The obtained images were then analyzed using a one-dimensional model of current density, which took account of the spherical shape of the nc-Si dots, the substrate orientation and the sample bias. A comparison between the experimental and theoretical results showed a fair agreement when the current pass through the dot center, although a large difference was found at a higher voltage. In addition, our model predicted tunneling current oscillations due to a change in tip position relative to the dot center.
Place, publisher, year, edition, pages
Japan Society of Applied Physics / Japanese Journal of Applied Physics; 1999 , 2005. Vol. 44, no 07-Jan, L88-L91 p.
silicon quantum dot; atomic force microscope; current imaging; current density
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-59217DOI: 10.1143/JJAP.44.L88ISI: 000227675600029OAI: oai:DiVA.org:liu-59217DiVA: diva2:350103