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Effect of growth temperature and post-growth thermal annealing on carrier localization and deep level emissions in GaNAs/GaAs quantum well structures
Chalmers University of Technology and Göteborg University.
Chalmers University of Technology.
Chalmers University of Technology.
Chalmers University of Technology.
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2005 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 86, no 12Article in journal (Refereed) Published
Abstract [en]

We report results from investigation of the optical properties of GaNAs/GaAs quantum well structures. The structures were grown by molecular-beam epitaxy at different temperatures, and subsequently postgrowth thermal treatments at different temperature were performed. The results show that the carrier localization is smaller in a structure grown at a temperature of 580 degrees C in comparison with a structure grown at 450 degrees C. Both structures also show a broaden deep level emission band. Furthermore, the deep level emission band and the carrier localization effect can be removed by thermal annealing at 650 degrees C in the structure grown at 450 degrees C. The structure quality and radiative recombination efficiency are significantly improved after annealing. However, annealing under the same condition has a negligible effect on the structure grown at 580 degrees C. (C) 2005 American Institute of Physics.

Place, publisher, year, edition, pages
American Institute of Physics , 2005. Vol. 86, no 12
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Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-59215DOI: 10.1063/1.1891271ISI: 000228050900026OAI: oai:DiVA.org:liu-59215DiVA: diva2:350107
Available from: 2010-09-10 Created: 2010-09-09 Last updated: 2017-12-12

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Zhao, QXWillander, Magnus

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