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Deep-level emissions influenced by O and Zn implantations in ZnO
Göteborg University.
Göteborg University.
Göteborg University.ORCID iD: 0000-0001-6235-7038
Chinese Academy of Sciences.
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2005 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 87, no 21Article in journal (Refereed) Published
Abstract [en]

A set of bulk ZnO samples implanted with O and Zn at various densities were investigated by photoluminescence. The implantation concentration of O and Zn is varied between 1x10(17)/cm(3) and 5x10(19)/cm(3). The samples were thermally treated in an oxygen gas environment after the implantation. The results clearly show the influence of O and Zn implantations on the deep-level emission. By comparing the photoluminescence spectra for the samples with different implantations, we can conclude that the V-Zn is responsible to the observed deep-level emission. In addition, a novel transition at the emission energy of 3.08 eV at 77 K appears in the O-implanted sample with 5x10(19)/cm(3) implantation concentration. The novel emission is tentatively identified as O-antisite O-Zn.

Place, publisher, year, edition, pages
American Institute of Physics , 2005. Vol. 87, no 21
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-59213DOI: 10.1063/1.2135880ISI: 000233362300031OAI: oai:DiVA.org:liu-59213DiVA: diva2:350109
Available from: 2010-09-10 Created: 2010-09-09 Last updated: 2014-01-15

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Zhao, QXWillander, Magnus

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