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Post-growth process relaxation properties of strained Cd0.92Zn0.08Te/Cd0.83Zn0.17Te quantum well heterostructures grown by molecular beam epitaxy
University of Technology and Gothenburg University.
University of Technology and Gothenburg University.
Chalmers Univ Technol, Lab Phys Elect and Photon, Dept Phys and Engn Phys, Dept Microtechnol and Nanosci,MC2, S-41296 Gothenburg, Sweden; Univ Gothenburg, S-41296 Gothenburg, Sweden; .
University of Technology and Gothenburg University.ORCID iD: 0000-0001-6235-7038
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2004 (English)In: Journal of Vacuum Science & Technology B, ISSN 1071-1023, E-ISSN 1520-8567, Vol. 22, no 2, 565-569 p.Article in journal (Refereed) Published
Abstract [en]

The post-growth structural stability regarding relaxation and defect propagation in Cd0.83Zn0.17Te/Cd0.92Zn0.08Te/Cd0.83Zn0.17Te quantum well (QW) heterostructures grown on [001] oriented Cd0.88Zn0.12Te substrates at 300degreesC by molecular beam epitaxy is investigated. The investigated heterostructures were subjected to post-growth thermal treatment in an ambient atmosphere in a temperature range between 280 and 550degreesC for 3 It each. We have used high-resolution x-ray diffraction as the main characterization tool. High-resolution rocking curves as well as the powerful two-dimensional reciprocal space mapping were employed in both symmetrical as well as asymmetrical reflections. The results indicate that at a post-growth temperature cycle of 350degreesC for 3 h slight modification of the Cd0.83Zn0.17Te/Cd0.92Zn0.08Te barrier/QW heterointerface smoothness is affected. This indicates the onset of migration of Zn atoms at this post-growth temperature time cycle. At 450 degreesC, this effect is more pronounced and seen as the complete disappearance of thickness fringes. For higher post-growth thermal treatment at 550 degreesC for 3 h, a hi-fi relaxation level accompanied by Zn content reduction is observed. A reduction of the Zn content down to 0.11 fractional value in the thick Cd0.83Zn0.17Te barrier is attributed to Zn out diffusion and/or Zn precipitation. (C) 2004 American Vacuum Society.

Place, publisher, year, edition, pages
American Vacuum Society; 1999 , 2004. Vol. 22, no 2, 565-569 p.
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-59207DOI: 10.1116/1.1651551ISI: 000221092300019OAI: diva2:350117
Available from: 2010-09-10 Created: 2010-09-09 Last updated: 2014-01-15

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Nour, OmerWillander, Magnus
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