liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Theory of a room-temperature silicon quantum dot device as a sensitive electrometer
University of Göteborg and Chalmers University of Technology.
University of Göteborg and Chalmers University of Technology.
Halmstad University.
University of Göteborg and Chalmers University of Technology.ORCID iD: 0000-0001-6235-7038
Show others and affiliations
2004 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 95, no 1, 323-326 p.Article in journal (Refereed) Published
Abstract [en]

We consider theoretically the use of a room-temperature silicon quantum dot based device for electrometer applications. The low power device includes two split gates that quantize the electronic energy levels in the emitter and collector regions. The base consists of a silicon quantum dot buried in silicon dioxide. The small size of the dot and quantization of the states in the leads combined to allow the device to operate at room temperature. The nonlinear current-voltage characteristics can be significantly altered by small changes to the potential of the split gates. Power dissipation in the device therefore changes with the split gate voltage, and this can be exploited in electrometer applications. A simple model of the power dissipated when the device is part of a microwave resonant inductor-resistor-capacitor tank circuit suggests that large changes in device power can be achieved by changing the gate voltage, thereby forming a measurable signal. We also demonstrate that the power dissipation in the device changes as the base width is varied, and that the current through the device increases exponentially with a decrease in base width.

Place, publisher, year, edition, pages
American Institute of Physics , 2004. Vol. 95, no 1, 323-326 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-59204DOI: 10.1063/1.1625095ISI: 000187341900050OAI: oai:DiVA.org:liu-59204DiVA: diva2:350121
Available from: 2010-09-10 Created: 2010-09-09 Last updated: 2017-12-12

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Willander, Magnus

Search in DiVA

By author/editor
Willander, Magnus
In the same journal
Journal of Applied Physics
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 64 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf