Intersubband photoconductivity of self-assembled InAs quantum dots embedded in InP
2004 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 95, no 4, 1829-1831 p.Article in journal (Refereed) Published
In this article, we present the results from photoconductivity measurements in the infrared spectral region (3-10 mum) on ensembles of self-assembled InAs quantum dots embedded in a matrix of InP. In the spectral distribution of the photocurrent, peaks are observed which we interpret in terms of transitions from the dots ground- and first-excited states to the conduction band of the dots/matrix. Furthermore, we have calculated the expected photoresponse and found it to be in qualitative agreement with our experimental data.
Place, publisher, year, edition, pages
American Institute of Physics , 2004. Vol. 95, no 4, 1829-1831 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-59203DOI: 10.1063/1.1638892ISI: 000188654100033OAI: oai:DiVA.org:liu-59203DiVA: diva2:350122