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Photoluminescence spectra of doped GaAs films
Chalmers University of Technology.
Chalmers University of Technology.ORCID iD: 0000-0001-6235-7038
Chinese Academy of Sciences.
Chinese Academy of Sciences.
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2004 (English)In: Applied Physics A: Materials Science & Processing, ISSN 0947-8396, E-ISSN 1432-0630, Vol. 79, no 3, 619-623 p.Article in journal (Refereed) Published
Abstract [en]

We have studied the dependence of the photoluminescence (PL) spectrum on the doping level and the film thickness of n-GaAs thin films, both experimentally and theoretically. It has been shown theoretically that modification of the PL spectrum of p-type material by p-type doping is very small due to the large valence-band hole effective mass. The PL spectrum of n-type material is affected by two factors: (1) the electron concentration which determines the Fermi level in the material; (2) the thickness of the film due to re-absorption of the PL signal. For the n-type GaAs thin films under current investigation, the doping level as well as the film thickness can be very well calibrated by the PL spectrum when the doping level is less than 2 x 10(18) cm(-3) and the film thickness is in the range of the penetration length of the PL excitation laser.

Place, publisher, year, edition, pages
Springer Science Business Media , 2004. Vol. 79, no 3, 619-623 p.
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-59201DOI: 10.1007/s00339-004-2560-yISI: 000221675000036OAI: diva2:350127
Available from: 2010-09-10 Created: 2010-09-09 Last updated: 2014-01-15

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Willander, Magnus
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