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A theoretical optimization of GaInP/GaInAs/GaAs based 980 nm Al-free pump laser using self-consistent numerical simulation
Ericsson Microelectronics AB.
Ericsson Microelectronics AB.
Ericsson Microelectronics AB.
Chalmers.ORCID iD: 0000-0001-6235-7038
2003 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 47, no 2, 291-295 p.Article in journal (Refereed) Published
Abstract [en]

Using self-consistent two-dimensional numerical simulation (LASTIP), the layer structure of the laser diodes is optimized. A ridge waveguide structure with GaInAs/GaAs and GaInAs/GaInAsP active regions has been simulated. The influence of the well numbers and waveguide thicknesses on the threshold current is studied. Compared to GaInAs/ GaAs, GaInAs/GaInAsP active region suffers from larger spread in the threshold current due to non-uniformities in the carrier density with increasing quantum wells. Simulations have been performed for different temperatures and at different cavity lengths.

Place, publisher, year, edition, pages
Elsevier Science B.V., Amsterdam. , 2003. Vol. 47, no 2, 291-295 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-59200DOI: 10.1016/S0038-1101(02)00209-5ISI: 000179997200020OAI: oai:DiVA.org:liu-59200DiVA: diva2:350128
Available from: 2010-09-10 Created: 2010-09-09 Last updated: 2017-12-12

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Willander, Magnus

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