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Nonradiative centers in InAs dots grown on GaAs substrates for 1.3 mu m emission
Chalmers University of Technology and Göteborg University.
Chalmers University of Technology and Göteborg University.
Chalmers University of Technology and Göteborg University.ORCID iD: 0000-0001-6235-7038
Chalmers University of Technology.
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2003 (English)In: Physics Letters A, ISSN 0375-9601, E-ISSN 1873-2429, Vol. 315, no 02-Jan, 150-155 p.Article in journal (Refereed) Published
Abstract [en]

Nonradiative centers in InAs dots grown on GaAs substrates are investigated in this study. The emission from InAs dots close to 1.3 mum is monitored under different excitation densities and different excitation energy. The used samples were also treated by hydrogen plasma in order to suppress the nonradiative centers. The purpose of this work is to study how nonradiative centers influence the efficiency of InAs dots emission and whether the nonradiative centers can be reduced. Our results clearly illustrate that there indeed exist nonradiative centers, both at the interface between the InAs dots and surrounding layers and in the GaAs layers, which can be suppressed by H-treatments. A technique to estimate relative amount of nonradiative centers is also discussed.

Place, publisher, year, edition, pages
Elsevier Science B.V., Amsterdam. , 2003. Vol. 315, no 02-Jan, 150-155 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-59197DOI: 10.1016/S0375-9601(03)00975-7ISI: 000184880300019OAI: oai:DiVA.org:liu-59197DiVA: diva2:350132
Available from: 2010-09-10 Created: 2010-09-09 Last updated: 2017-12-12

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Zhao, QXWillander, Magnus

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