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X-ray diffraction determination of the interface structure of CdSe/BeTe superlattices
Ioffe Physico-Technical Institute of RAS, St. Petersburg.
Ioffe Physico-Technical Institute of RAS, St. Petersburg.
Ioffe Physico-Technical Institute of RAS, St. Petersburg.
RAS.
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2003 (English)In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 36, no 10A, A166-A171 p.Article in journal (Refereed) Published
Abstract [en]

Structural study of CdSe/BeTe superlattices (SLs) grown by molecular beam epitaxy on GaAs substrate was performed by using double and triple crystal x-ray diffractometry. The period of the studied structures was about 5 nm, while the thickness of thin CdSe insertions varied from 0.4 to 1.5 monolayer. It is shown that new Be-Se bonds arise at the BeTe-CdSe interfaces in addition to the Be-Se bonds expected at the CdSe-BeTe interfaces. From the analysis of the diffraction curves of 002-reflection the complex composition of interfaces and thin insertions has been determined and contribution of all types of bonds in each SL period calculated. The diffraction curves of 004-reflection were used for the specification of the fine structure of the interfaces.

Place, publisher, year, edition, pages
Iop Publishing Ltd , 2003. Vol. 36, no 10A, A166-A171 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-59192DOI: 10.1088/0022-3727/36/10A/334ISI: 000183446300035OAI: oai:DiVA.org:liu-59192DiVA: diva2:350138
Available from: 2010-09-10 Created: 2010-09-09 Last updated: 2017-12-12

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Willander, Magnus

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