X-ray diffraction determination of the interface structure of CdSe/BeTe superlattices
2003 (English)In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 36, no 10A, A166-A171 p.Article in journal (Refereed) Published
Structural study of CdSe/BeTe superlattices (SLs) grown by molecular beam epitaxy on GaAs substrate was performed by using double and triple crystal x-ray diffractometry. The period of the studied structures was about 5 nm, while the thickness of thin CdSe insertions varied from 0.4 to 1.5 monolayer. It is shown that new Be-Se bonds arise at the BeTe-CdSe interfaces in addition to the Be-Se bonds expected at the CdSe-BeTe interfaces. From the analysis of the diffraction curves of 002-reflection the complex composition of interfaces and thin insertions has been determined and contribution of all types of bonds in each SL period calculated. The diffraction curves of 004-reflection were used for the specification of the fine structure of the interfaces.
Place, publisher, year, edition, pages
Iop Publishing Ltd , 2003. Vol. 36, no 10A, A166-A171 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-59192DOI: 10.1088/0022-3727/36/10A/334ISI: 000183446300035OAI: oai:DiVA.org:liu-59192DiVA: diva2:350138