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Determination of carrier-transfer length from side-wall quantum well to quantum wire by micro-photoluminescence scanning
Chinese Academy of Science, Shanghai.
Chinese Academy of Science, Shanghai.
Chinese Academy of Science, Shanghai.
Chinese Academy of Science, Shanghai.
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2003 (English)In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 32, no 8, 913-916 p.Article in journal (Refereed) Published
Abstract [en]

Micro-photoluminescence (mu-PL) line scanning across a single V-groove, GaAs/AlGaAs quantum wire (QWR) has been performed at room temperature, revealing a clear spatial-dependence of the PL. After fitting each PL spectrum by multi-Gaussian line shapes, intensity profiles of each PL component from confined structures have been obtained as functions of the scanning position. The PL quenching of a side-wall quantum well (SQWL) has been recognized in a certain area in the vicinity of the QWR and is interpreted by carrier transfer into the QWR within effective transfer length. By simulating the carrier-transfer process from SQWL to QWR as a convolution of a step function for carrier distribution and a Gaussian function for exciting laser irradiance, the effective transfer length of about 1.8+/-0.3 mum has, therefore, been concluded.

Place, publisher, year, edition, pages
Springer Science Business Media , 2003. Vol. 32, no 8, 913-916 p.
Keyword [en]
V-groove quantum wire; carrier-transfer length; micro-photoluminescence
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-59189DOI: 10.1007/s11664-003-0209-9ISI: 000184610800015OAI: diva2:350141
Available from: 2010-09-10 Created: 2010-09-09 Last updated: 2014-01-15

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Willander, Magnus
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