liu.seSearch for publications in DiVA
Change search
ReferencesLink to record
Permanent link

Direct link
Strong enhancement of the photoluminescence-efficiency from InAs quantum dots
Chalmers University of Technology.
Chalmers University of Technology.ORCID iD: 0000-0001-6235-7038
Chalmers University of Technology.
Chalmers University of Technology.
Show others and affiliations
2003 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 93, no 3, 1533-1536 p.Article in journal (Refereed) Published
Abstract [en]

InAs quantum dots (QDs) have been investigated using optical spectroscopy, in order to understand the experimental observation of strong enhancement of their photoluminescence efficiency. When a tunneling barrier is introduced between the, InAs layer and the GaAs cap layer, the intensity of the InAs QD emission increases by more than an order of magnitude at the excitation density of 60 W/cm(2). The enhancement of the optical recombination efficiency is due to the suppression of the nonradiative transitions in the wetting layer. The strong enhancement of the InAs emission can lead to an increase in the optical gain of the InAs laser structure

Place, publisher, year, edition, pages
American Institute of Physics , 2003. Vol. 93, no 3, 1533-1536 p.
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-59188DOI: 10.1063/1.1527706ISI: 000180630200032OAI: diva2:350142
Available from: 2010-09-10 Created: 2010-09-09 Last updated: 2014-01-15

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Zhao, QXWillander, Magnus
In the same journal
Journal of Applied Physics
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 45 hits
ReferencesLink to record
Permanent link

Direct link