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Strong enhancement of the photoluminescence-efficiency from InAs quantum dots
Chalmers University of Technology.
Chalmers University of Technology.ORCID iD: 0000-0001-6235-7038
Chalmers University of Technology.
Chalmers University of Technology.
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2003 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 93, no 3, 1533-1536 p.Article in journal (Refereed) Published
Abstract [en]

InAs quantum dots (QDs) have been investigated using optical spectroscopy, in order to understand the experimental observation of strong enhancement of their photoluminescence efficiency. When a tunneling barrier is introduced between the, InAs layer and the GaAs cap layer, the intensity of the InAs QD emission increases by more than an order of magnitude at the excitation density of 60 W/cm(2). The enhancement of the optical recombination efficiency is due to the suppression of the nonradiative transitions in the wetting layer. The strong enhancement of the InAs emission can lead to an increase in the optical gain of the InAs laser structure

Place, publisher, year, edition, pages
American Institute of Physics , 2003. Vol. 93, no 3, 1533-1536 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-59188DOI: 10.1063/1.1527706ISI: 000180630200032OAI: oai:DiVA.org:liu-59188DiVA: diva2:350142
Available from: 2010-09-10 Created: 2010-09-09 Last updated: 2017-12-12

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Zhao, QXWillander, Magnus

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