Electronic subbands of Monte Carlo simulated doping profiles defined by a split gate potential during thermal treatment
2003 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 93, no 5, 2712-2718 p.Article in journal (Refereed) Published
We studied a model in which an external one-dimensional parabolic potential defined by split gates is used during heat treatment to calculate impurity profiles with an approximately Gaussian distribution in a semiconductor layer. Using a recently published model, the impurities are moved by a Monte Carlo procedure, to calculate equilibrium impurity profiles for different layer thicknesses and initial doping levels. The samples are cooled and the electronic subbands are then calculated self-consistently by coupling the Schrodinger equation with a charge neutral Poisson equation for temperatures between 40-300 K. The model includes temperature and doping concentration dependent impurity ionization rates. The polarity and strength of the split gate voltage may be altered to affect the subband energies and wave functions. When a parabolic potential with a negative constant was added, we found that it is possible to produce a charge density that consists of two peaks located near the quantum well walls. This effect is slightly washed out at room temperature. For a parabolic potential with a large and positive constant, the charge density becomes sharply localized at the middle of the quantum well. Throughout the calculations, we have used slightly nonsymmetric doping profiles.
Place, publisher, year, edition, pages
American Institute of Physics , 2003. Vol. 93, no 5, 2712-2718 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-59187DOI: 10.1063/1.1543244ISI: 000181307000062OAI: oai:DiVA.org:liu-59187DiVA: diva2:350144