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Room temperature luminescence from ZnSe1-xTex (x less than 1%) epilayers grown on (001) GaAs
Chalmers University of Technology & Gothenburg University.
Chalmers University of Technology & Gothenburg University.
Chalmers University of Technology & Gothenburg University.ORCID iD: 0000-0001-6235-7038
Chung Yuan University.
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2003 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 94, no 4, 2337-2340 p.Article in journal (Refereed) Published
Abstract [en]

Photoluminescence experiments have been performed to systematically study the effect of thermal processing on ZnSe1-xTex (xless than1%) epilayers. Our results show that, a ZnSeTe epilayer under proper post growth thermal annealing can emit light in the visible range of 5500-7000 Angstrom at room temperature. Thus by systematically processing these samples, they could be used for II-VI laser diodes that can operate at room temperature. The results from hydrogen passivation study done on these samples are consistent with the previous reports that the broadband emission is related to an isoelectronic defect, i.e., excitons bound to the Te clusters.

Place, publisher, year, edition, pages
American Institute of Physics , 2003. Vol. 94, no 4, 2337-2340 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-59185DOI: 10.1063/1.1593800ISI: 000184469800029OAI: oai:DiVA.org:liu-59185DiVA: diva2:350148
Available from: 2010-09-10 Created: 2010-09-09 Last updated: 2017-12-12

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Zhao, QXWillander, Magnus

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