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Optical recombination of ZnO nanowires grown on sapphire and Si substrates
Chalmers University of Technology and Göteborg University.
Chalmers University of Technology and Göteborg University.ORCID iD: 0000-0001-6235-7038
Chalmers University of Technology and Göteborg University.
Chalmers University of Technology and Göteborg University.
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2003 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 83, no 1, 165-167 p.Article in journal (Refereed) Published
Abstract [en]

ZnO nanowires have been grown on sapphire and Si substrates using catalytic growth. A strong near-band-gap ultraviolet emission is observed at room temperature. By carefully studying the temperature dependence of ZnO wire emission, we found that the room-temperature UV emission contains two different transitions; one is related to the ZnO free exciton and the other is related to the free-to-bound transition. The bound state has a binding energy of about 124 meV. The results from optical measurements show that a high quality of ZnO nanowires grown on sapphire and Si substrates has been achieved.

Place, publisher, year, edition, pages
American Institute of Physics , 2003. Vol. 83, no 1, 165-167 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-59183DOI: 10.1063/1.1591069ISI: 000183877800056OAI: oai:DiVA.org:liu-59183DiVA: diva2:350152
Available from: 2010-09-10 Created: 2010-09-09 Last updated: 2014-01-15

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Zhao, QXWillander, Magnus

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