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Enhancement of room-temperature photoluminescence in InAs quantum dots
Chinese Academy of Sciences.
Chinese Academy of Sciences.
Chinese Academy of Sciences.
Chinese Academy of Sciences.
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2003 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 83, no 21, 4300-4302 p.Article in journal (Refereed) Published
Abstract [en]

We report pronounced enhancement of room-temperature photoluminescence up to 80-fold induced by proton implantation and the rapid thermal annealing process in a multilayer InAs/GaAs quantum-dot structure. This effect is studied by a combination of material methods and resulted from both proton passivation and carrier capture enhancement effects. The maximum photoluminescence peak shift is about 23 meV, resulting from the intermixing of quantum dots. Linear dependence behavior as observed for both the nonradiative recombination time and carrier relaxation time on the ion-implantation dose. Maximum enhancement of the photoluminescence is observed for a proton implantation dose of 1.0x10(14) cm(-2) followed by rapid thermal annealing at 700 degreesC. These effects will be useful for quantum dot optoelectronic devices.

Place, publisher, year, edition, pages
American Institute of Physics , 2003. Vol. 83, no 21, 4300-4302 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-59182DOI: 10.1063/1.1623324ISI: 000186662000008OAI: oai:DiVA.org:liu-59182DiVA: diva2:350154
Available from: 2010-09-10 Created: 2010-09-09 Last updated: 2017-12-12

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Zhao, QXWillander, Magnus

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