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Spin relaxation in asymmetrical heterostructures
Russian Academy of Science .
Russian Academy of Science .
Chalmers.ORCID iD: 0000-0001-6235-7038
2002 (English)In: Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, E-ISSN 1090-6479, Vol. 36, no 1, 91-97 p.Article in journal (Refereed) Published
Abstract [en]

Electron spin relaxation by the Dyakonov-Perel mechanism is investigated theoretically in asymmetrical III-V heterostructures. Spin relaxation anisotropy for all three dimensions is demonstrated for a wide range of structural parameters and temperatures. Dependences of spin relaxation rates are obtained both for a GaAs-based heterojunctions and triangular quantum wells. The calculations show a several-orders-of-magnitude difference between spin relaxation times for heterostructure parameters realized in experiments.

Place, publisher, year, edition, pages
Springer Science Business Media , 2002. Vol. 36, no 1, 91-97 p.
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-59176DOI: 10.1134/1.1434520ISI: 000172989300015OAI: diva2:350162
Available from: 2010-09-10 Created: 2010-09-09 Last updated: 2014-01-15

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Willander, Magnus
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