liu.seSearch for publications in DiVA
Change search
ReferencesLink to record
Permanent link

Direct link
Cryogenic performance of ultrathin oxide MOS capacitors with in situ doped p(+) poly-Si1-xGex and poly-Si gate materials
Chalmers .
Chalmers .
Chalmers .
Chalmers.ORCID iD: 0000-0001-6235-7038
Show others and affiliations
2002 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 17, no 9, 942-946 p.Article in journal (Refereed) Published
Abstract [en]

A low-temperature electrical characterization of ultrathin oxide MOS capacitors with p(+) poly-Si1-xGex and poly-Si gate is performed. The investigated structures are suitable for future nano-scaled high speed MOSFETs. The aim of this study is to compare the low-temperature performance of poly-Si1-xGex and poly-Si gate MOS structures in the nanoscale channel length regime. Apart from the significant change in the flat band voltage, the result shows that all the poly-Si and poly-Si1-xGex gated MOS structures exhibit two centres of polarity change (zero-temperature coefficients) in capacitance. The second polarity change leads to an exclusive phenomenon in these structures. The low-temperature capacitance is found to be less than high-temperature capacitance at strong accumulation and this is in contrast to what has been observed so far in metal-gated capacitors. It is also observed that the temperature dependence of the tunnelling current is only on the oxide thickness and not on the gate material used.

Place, publisher, year, edition, pages
Iop Publishing Ltd , 2002. Vol. 17, no 9, 942-946 p.
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-59175DOI: 10.1088/0268-1242/17/9/307ISI: 000178307600010OAI: diva2:350163
Available from: 2010-09-10 Created: 2010-09-09 Last updated: 2014-01-15

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Nour, OmerWillander, Magnus
In the same journal
Semiconductor Science and Technology
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 20 hits
ReferencesLink to record
Permanent link

Direct link