Monte Carlo simulation of controlled impurity diffusion in semiconductors using split gates
2002 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 65, no 7Article in journal (Refereed) Published
We propose an experiment, where impurity diffusion in a semiconductor layer during heat treatment, can be controlled by a nonlinear potential produced by split gates. We approximated the nonlinear potential as a parabola centered at the middle of the semiconductor layer; the impurities diffuse into the central region. Starting with the phenomenological Arrhenius equation, we describe a simple model for the impurity diffusion, and then perform Monte Carlo simulations to predict the impurity profile, for different parabolic constants and impurity densities. The results show that charge builds up in the central area creating a long-range internal electric field. The internal field at high doping levels. can be of sufficient strength to cause the broadening of the impurity density profile. The width of the impurity profile can be controlled by the curvature of the parabola, which in turn depends on the split-gate geometry and voltage.
Place, publisher, year, edition, pages
American Physical Society , 2002. Vol. 65, no 7
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-59173DOI: 10.1103/PhysRevB.65.075308ISI: 000174030900062OAI: oai:DiVA.org:liu-59173DiVA: diva2:350165