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Spin relaxation anisotropy in two-dimensional semiconductor systems
Russian Academy of Science.
Russian Academy of Science.
Chalmers.ORCID iD: 0000-0001-6235-7038
2002 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 14, no 12, R271-R283 p.Article, review/survey (Refereed) Published
Abstract [en]

Spin relaxation is investigated theoretically in two-dimensional systems. Various semiconductor structures of both n and p types are studied in detail. The most important spin relaxation mechanisms are considered. The spin relaxation times are calculated taking into account the contributions to the spin-orbit interaction due to the bulk inversion asymmetry and to the structure inversion asymmetry. It is shown that in-plane anisotropy of electron spin relaxation appears in III-V asymmetrical heterostructures. This anisotropy may be controlled by external parameters, and the spin relaxation times differ by several orders of magnitude.

Place, publisher, year, edition, pages
Iop Publishing Ltd , 2002. Vol. 14, no 12, R271-R283 p.
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-59164ISI: 000175333200009OAI: diva2:350178
Available from: 2010-09-10 Created: 2010-09-09 Last updated: 2014-01-15

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Willander, Magnus
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