Spin relaxation anisotropy in two-dimensional semiconductor systems
2002 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 14, no 12, R271-R283 p.Article, review/survey (Refereed) Published
Spin relaxation is investigated theoretically in two-dimensional systems. Various semiconductor structures of both n and p types are studied in detail. The most important spin relaxation mechanisms are considered. The spin relaxation times are calculated taking into account the contributions to the spin-orbit interaction due to the bulk inversion asymmetry and to the structure inversion asymmetry. It is shown that in-plane anisotropy of electron spin relaxation appears in III-V asymmetrical heterostructures. This anisotropy may be controlled by external parameters, and the spin relaxation times differ by several orders of magnitude.
Place, publisher, year, edition, pages
Iop Publishing Ltd , 2002. Vol. 14, no 12, R271-R283 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-59164ISI: 000175333200009OAI: oai:DiVA.org:liu-59164DiVA: diva2:350178