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Quantum mechanical model and simulation of GaAs/AlGaAs quantum well infrared photodetector-II electrical aspects
Chalmers.ORCID iD: 0000-0001-6235-7038
2002 (English)In: Hongwai yu haomibo xuebao, ISSN 1001-9014, Vol. 21, no 6, 401-407 p.Article in journal (Refereed) Published
Abstract [en]

A complete quantum mechanical model for GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) was presented. The photocurrent was investigated by the optical transition( absorption coefficient) between the ground state and the excited states due to the nonzero component of the radiation field along the sample growth direction. By studying the inter-diffusion of the Al atoms across the GaAs/AlGaAs heterointer faces, the mobility of the drift-diffusion carriers in the excited states was calculated. As a result, the measurement results of the dark current and the photocurrent spectra are explained theoretically.

Place, publisher, year, edition, pages
Science Press , 2002. Vol. 21, no 6, 401-407 p.
Keyword [en]
quantum well infrared photodetector (QWIP); inter-diffusion; carrier mobility; alloy scattering; wavefunction boundary condition
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-59161ISI: 000179918100001OAI: diva2:350183
Available from: 2010-09-10 Created: 2010-09-09 Last updated: 2014-01-15

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Willander, Magnus
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