Formation and charge control of a quantum dot by etched trenches and multiple gates
2002 (English)In: Applied Physics A: Materials Science & Processing, ISSN 0947-8396, E-ISSN 1432-0630, Vol. 74, no 6, 741-745 p.Article in journal (Refereed) Published
We have fabricated a GaAs/InGaAs/AlGaAs-based single-electron transistor (SET) formed by etched trenches and multiple gates. Clear Coulomb-blockade oscillations have been observed when the gate biases are scanned. By self-consistently solving three-dimensional Schrodinger and Poisson equations, we have studied the energy-band structure and the carrier distribution of our SET. General agreement between numerical simulation results and measurement data has been obtained, thus indicating the effectiveness of our SET-device design as well as the necessity of a complete three-dimensional quantum-mechanical simulation.
Place, publisher, year, edition, pages
Springer Science Business Media , 2002. Vol. 74, no 6, 741-745 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-59155DOI: 10.1007/s003390201298ISI: 000175356200004OAI: oai:DiVA.org:liu-59155DiVA: diva2:350191