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Suppressing phosphorus diffusion in germanium by carbon incorporation
National Nano Device Labs.
National Nano Device Labs.
National Nano Device Labs.
National Nano Device Labs.
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2005 (English)In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 41, no 24, 1354-1355 p.Article in journal (Refereed) Published
Abstract [en]

A problem in the Ge MOSFET process is that the phosphor-us for n-type doping in Ge diffuses very fast. It is very difficult to form the shallow source/drain p-n junctions. It is reported, for the first time, that the phosphorus diffusion in Ge during activation (or annealing) can be suppressed effectively owing to carbon incorporation.

Place, publisher, year, edition, pages
Iet , 2005. Vol. 41, no 24, 1354-1355 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-59149DOI: 10.1049/el:20052999ISI: 000234063300032OAI: oai:DiVA.org:liu-59149DiVA: diva2:350203
Available from: 2010-09-10 Created: 2010-09-09 Last updated: 2010-09-10

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Ni, Wei-Xin

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