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Interface state density of free-standing GaN Schottky diodes
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Applied Material Science, Institute for Molecules and Materials, Radboud University Nijmegen, Heyendaalsweg 135, 6525AJ Nijmegen, The Netherlands.
Department of Physics, The Islamia University of Bahawalpur, Bahawalpur 63100, Pakistan.
Applied Material Science, Institute for Molecules and Materials, Radboud University Nijmegen, Heyendaalsweg 135, 6525AJ Nijmegen, The Netherlands.
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2010 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 25, no 9, 095008- p.Article in journal (Refereed) Published
Abstract [en]

Schottky diodes were fabricated on the HVPE-grown, free-standing gallium nitride (GaN) layers of n- and p-types. Both contacts (ohmic and Schottky) were deposited on the top surface using Al/Ti and Pd/Ti/Au, respectively. The Schottky diode fabricated on n-GaN exhibited double barriers with values of 0.9 and 0.6 eV and better performance in the rectification factor together with reverse and forward currents with an ideality factor of 1.8. The barrier height for the p-GaN Schottky diode is 0.6 eV with an ideality factor of 4.16. From the capacitance-voltage (C-V) measurement, the net doping concentration of n-GaN is 4 x 10(17) cm(-3), resulting in a lower reverse breakdown of around -12 V. The interface state density (N-SS) as a function of E-C-E-SS is found to be in the range 4.23 x 10(12)-3.87 x 10(11) eV(-1) cm(-2) (below the conduction band) from Ec-0.90 to E-C-0.99. Possible reasons responsible for the low barrier height and high ideality factor have been addressed.

Place, publisher, year, edition, pages
Iop Publishing Ltd , 2010. Vol. 25, no 9, 095008- p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-59253DOI: 10.1088/0268-1242/25/9/095008ISI: 000281221200009OAI: oai:DiVA.org:liu-59253DiVA: diva2:350377
Available from: 2010-09-10 Created: 2010-09-10 Last updated: 2011-05-10Bibliographically approved
In thesis
1. Physical simulation, fabrication and characterization of Wide bandgap semiconductor devices
Open this publication in new window or tab >>Physical simulation, fabrication and characterization of Wide bandgap semiconductor devices
2011 (English)Licentiate thesis, comprehensive summary (Other academic)
Abstract [en]

Wide band gap semiconductors, Zinc Oxide (ZnO), Gallium Nitride (GaN) and Silicon Carbide (SiC) have been emerged to be the most promising semiconductors for future applications in electronic, optoelectronic and power devices. They offer incredible advantages in terms of their optical properties, DC and microwave frequencies power handling capability, piezoelectric properties in building electromechanical coupled sensors and transducers, biosensors and bright light emission. For producing high quality devices, thermal treatment always plays an important role in improving material structural quality which results in improved electrical and optical properties. Similarly good quality of metal–semiconductor interface, sensitive to the semiconductor surface, is always required.

In this thesis we report the study of the interface states density for Pd/Ti/Au Schottky contacts on the free-standing GaN and post fabrication annealing effects on the electrical and optical properties of ZnO/Si hetero-junction diodes. The determination of interface states density (NSS) distribution within the band gap would help in understanding the processes dominating the electrical behavior of the metal–semiconductor contacts. The study of annealing effects on photoluminescence, rectification and ideality factor of ZnO/Si hetero-junction diodes are helpful for optimization and realization to build up the confidence to commercialize devices for lightening. A comparison of device performance between the physical simulations and measured device characteristics has also been carried out for pd/ZnO Schottky diode to understand the behavior of the devices.

This research work not only teaches the effective way of device fabrication, but also obtains some beneficial results in aspects of their optical and electrical properties, which builds theoretical and experimental foundation for much better and broader applications of wide band gap semiconductor devices.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2011. 28 p.
Series
Linköping Studies in Science and Technology. Thesis, ISSN 0280-7971 ; 1492
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-68076 (URN)LIU-TEK-LIC-2011: 31 (Local ID)978-91-7393-148-9 (ISBN)LIU-TEK-LIC-2011: 31 (Archive number)LIU-TEK-LIC-2011: 31 (OAI)
Supervisors
Available from: 2011-05-10 Created: 2011-05-10 Last updated: 2011-05-10Bibliographically approved

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Muniza Faraz, SadiaUl Wahab, Qamar

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