A 900 MHz 26.8 dBm differential Class-E CMOS power amplifier in German Microwave Conference Digest of Papers, GeMIC 2010, vol , issue , pp 276-279
2010 (English)In: German Microwave Conference Digest of Papers, GeMIC 2010, 2010, 276-279 p.Conference paper (Refereed)
A 900 MHz differential Class-E amplifier with finite dc inductance has been designed in CMOS. The large inductance of RF choke has been replaced with a finite inductance that provides the required inductive reactance of the class E amplifier. Resonance circuit is realized without series inductor by novel use of lattice LC balun. The amplifier delivers 26.8 dBm power to a 50 O load from a 2.2 V supply. A maximum Power Added Efficiency (PAE) of 43% is achieved.
Place, publisher, year, edition, pages
2010. 276-279 p.
Component; Class E; Differential amplifier; Finite inductance; Lattice LC balun
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-59089OAI: oai:DiVA.org:liu-59089DiVA: diva2:352435