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A 900 MHz 26.8 dBm differential Class-E CMOS power amplifier in German Microwave Conference Digest of Papers, GeMIC 2010, vol , issue , pp 276-279
Electronic Engineering Department, NED University of Engineering and Technology, Karachi, Pakistan.
Electronic Engineering Department, NED University of Engineering and Technology, Karachi, Pakistan.
Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
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2010 (English)In: German Microwave Conference Digest of Papers, GeMIC 2010, 2010, 276-279 p.Conference paper, Published paper (Refereed)
Abstract [en]

A 900 MHz differential Class-E amplifier with finite dc inductance has been designed in CMOS. The large inductance of RF choke has been replaced with a finite inductance that provides the required inductive reactance of the class E amplifier. Resonance circuit is realized without series inductor by novel use of lattice LC balun. The amplifier delivers 26.8 dBm power to a 50 O load from a 2.2 V supply. A maximum Power Added Efficiency (PAE) of 43% is achieved.

Place, publisher, year, edition, pages
2010. 276-279 p.
Keyword [en]
Component; Class E; Differential amplifier; Finite inductance; Lattice LC balun
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-59089OAI: oai:DiVA.org:liu-59089DiVA: diva2:352435
Available from: 2010-09-21 Created: 2010-09-09 Last updated: 2010-10-01

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Fritzin, JonasAlvandpour, AtilaWahab, Qamar

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