Reducing the impurity incorporation from residual gas by ion bombardment during high vacuum magnetron sputtering
2006 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 88, no 19, 191905- p.Article in journal (Refereed) Published
The influence of ion energy on the hydrogen incorporation has been investigated for alumina thin films, deposited by reactive magnetron sputtering in an Ar/O-2/H2O environment. Ar+ with an average kinetic energy of similar to 5 eV was determined to be the dominating species in the plasma. The films were analyzed with x-ray diffraction, x-ray photoelectron spectroscopy, and elastic recoil detection analysis, demonstrating evidence for amorphous films with stoichiometric O/Al ratio. As the substrate bias potential was increased from -15 V (floating potential) to -100 V, the hydrogen content decreased by similar to 70%, from 9.1 to 2.8 at. %. Based on ab initio calculations, these results may be understood by thermodynamic principles, where a supply of energy enables surface diffusion, H-2 formation, and desorption [Rosen , J. Phys.: Condens. Matter 17, L137 (2005)]. These findings are of importance for the understanding of the correlation between ion energy and film composition and also show a pathway to reduce impurity incorporation during film growth in a high vacuum ambient.
Place, publisher, year, edition, pages
American Institute of Physics , 2006. Vol. 88, no 19, 191905- p.
Medical and Health Sciences
IdentifiersURN: urn:nbn:se:liu:diva-59684DOI: 10.1063/1.2193044ISI: 000237477400024OAI: oai:DiVA.org:liu-59684DiVA: diva2:353081