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Large homogeneous mono-/bi-layer graphene on 6H-SiC(0001) and buffer layer elimination
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Lund University.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
2010 (English)In: JOURNAL OF PHYSICS D-APPLIED PHYSICS, ISSN 0022-3727, Vol. 43, no 37, 374010- p.Article in journal (Refereed) Published
Abstract [en]

In this paper we discuss and review results of recent studies of epitaxial growth of graphene on silicon carbide. The presentation is focused on high quality, large and uniform layer graphene growth on the SiC(0 0 0 1) surface and the results of using different growth techniques and parameters are compared. This is an important subject because access to high-quality graphene sheets on a suitable substrate plays a crucial role for future electronics applications involving patterning. Different techniques used to characterize the graphene grown are summarized. We moreover show that atomic hydrogen exposures can convert a monolayer graphene sample on SiC(0 0 0 1) to bi-layer graphene without the carbon buffer layer. Thus, a new process to prepare large, homogeneous stable bi-layer graphene sheets on SiC(0 0 0 1) is presented. The process is shown to be reversible and should be very attractive for various applications, including hydrogen storage.

Place, publisher, year, edition, pages
Iop Publishing Ltd , 2010. Vol. 43, no 37, 374010- p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-59713DOI: 10.1088/0022-3727/43/37/374010ISI: 000281544100011OAI: oai:DiVA.org:liu-59713DiVA: diva2:353188
Note

Original Publication: Chariya Virojanadara, Rositsa Yakimova, A A Zakharov and L I Johansson, Large homogeneous mono-/bi-layer graphene on 6H-SiC(0001) and buffer layer elimination, 2010, JOURNAL OF PHYSICS D-APPLIED PHYSICS, (43), 37, 374010. http://dx.doi.org/10.1088/0022-3727/43/37/374010 Copyright: Iop Publishing Ltd http://www.iop.org/

Available from: 2010-09-24 Created: 2010-09-24 Last updated: 2013-05-07

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