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Increased electromechanical coupling in w-ScxAl1-xN
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics . Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
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2010 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 97, no 11, 112902- p.Article in journal (Refereed) Published
Abstract [en]

AlN is challenged as the material choice in important thin film electroacoustic devices for modern wireless communication applications. We present the promise of superior electromechanical coupling (kt2), in w−ScxAl1−xN by studying its dielectric properties. w−ScxAl1−xN (0≤x≤0.3) thin films grown by dual reactive magnetron sputtering exhibited low dielectric losses along with minor increased dielectric constant (ε). Ellipsometry measurements of the high frequency ε showed good agreement with density function perturbation calculations. Our data show that kt2 will improve from 7% to 10% by alloying AlN with up to 20 mol % ScN.

 

Place, publisher, year, edition, pages
2010. Vol. 97, no 11, 112902- p.
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-59839DOI: 10.1063/1.3489939ISI: 000282032900055OAI: oai:DiVA.org:liu-59839DiVA: diva2:353519
Note
Original Publication: Gunilla Wingqvist, Ferenc Tasnadi, Agne Zukauskaite, Jens Birch, Hans Arwin and Lars Hultman, Increased electromechanical coupling in w-ScxAl1-xN, 2010, Applied Physics Letters, (97), 11, 112902. http://dx.doi.org/10.1063/1.3489939 Copyright: American Institute of Physics http://www.aip.org/ Available from: 2010-09-27 Created: 2010-09-27 Last updated: 2017-12-12Bibliographically approved
In thesis
1. Metastable YAlN and ScAlN thin films: growth and characterization
Open this publication in new window or tab >>Metastable YAlN and ScAlN thin films: growth and characterization
2012 (English)Licentiate thesis, comprehensive summary (Other academic)
Abstract [en]

ScxAl1-xN and YxAl1-xN thin films were deposited in a ultra high vacuum system using reactive magnetron co-sputtering from elemental Al, Sc and Y targets in Ar/N2. Their mechanical, electrical, optical, and piezoelectrical properties were investigated with the help of transmission electron microscopy, xray diffraction, ellipsometry, I-V and C-V measurements, and two different techniques for piezoelectric characterization: piezoresponse force microscopy and double beam interferometry. Compared to AlN, improved electromechanical coupling and increase in piezoelectric response was found in ScxAl1-xN/TiN/Al2O3 structures with Sc content up to x=0.2. Microstructure of the films had a stronger influence on piezoelectric properties than the crystalline quality, which affected the leakage currents. YxAl1-xN thin films show a formation of solid solution up to x=0.22. Lattice constants obtained experimentally are in good agreement with theoretical predictions obtained through first principle (ab initio) calculations using density-functional formalism. The mixing enthalpy for wurtzite, cubic, and layered hexagonal phases of the YxAl1-xN system was also calculated.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2012. 46 p.
Series
Linköping Studies in Science and Technology. Thesis, ISSN 0280-7971 ; 1524
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-76474 (URN)10.3384/lic.diva-76474 (DOI)LIU-TEK-LIC-2012:9 (Local ID)978-91-7519-934-4 (ISBN)LIU-TEK-LIC-2012:9 (Archive number)LIU-TEK-LIC-2012:9 (OAI)
Supervisors
Available from: 2012-04-10 Created: 2012-04-10 Last updated: 2016-08-31Bibliographically approved
2. Metastable ScAlN and YAlN Thin Films Grown by Reactive Magnetron Sputter Epitaxy
Open this publication in new window or tab >>Metastable ScAlN and YAlN Thin Films Grown by Reactive Magnetron Sputter Epitaxy
2014 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Metastable ScxAl1-xN and YxAl1-xN thin films were deposited in an ultra high vacuum system using reactive magnetron sputter epitaxy from elemental Al, Sc, and Y targets in Ar/N2 gas mixture. Their structural, electrical, optical, mechanical, and piezoelectrical properties were investigated by using the transmission electron microscopy, x-ray diffraction, spectroscopic ellipsometry, I-V and C-V measurements, nanoindentation, and two different techniques for piezoelectric characterization: piezoresponse force microscopy and double beam interferometry.

Compared to AlN, improved electromechanical coupling and increase in piezoelectric response was found in ScxAl1-xN/TiN/Al2O3 structures with Sc content up to x=0.2. Decreasing the growth temperature down to 400 °C improved the microstructure and crystalline quality of the material. Microstructure of the films had a stronger influence on piezoelectric properties than the crystalline quality, which affected the leakage currents. When x was increased from x=0 to x=0.3, the hardness and reduced Young’s modulus Er showed a decrease from 17 GPa to 11 GPa, and 265 GPa down to 224 GPa, respectively. In ScxAl1-xN/InyAl1-yN superlattices, ScxAl1-xN layers negative lattice mismatched to In-rich InyAl1-yN were found to be stable at higher Sc concentration (x=0.4) than lattice-matched or positive lattice mismatched layers, confirmed by first principle (ab initio) calculations using density-functional formalism.

Al-rich YxAl1-xN thin films were synthesized and reported for the first time. Formation of solid solution was observed up to x=0.22 and an increase in growth temperature up to 900°C improved the crystalline quality of the YxAl1-xN films. The band gap of YxAl1-xN decreased from 6.2 eV for AlN down to 4.5 eV (x=0.22) and was shown to follow Vegard’s rule. Refractive indices and extinction coefficients were also determined. Lattice constants of wurtzite YxAl1-xN measured experimentally are in good agreement with theoretical predictions obtained through ab initio calculations. The mixing enthalpy

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2014. 64 p.
Series
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1564
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-103832 (URN)10.3384/diss.diva-103832 (DOI)978-91-7519-434-9 (ISBN)
Public defence
2014-02-21, Planck, Fysikhuset, Campus Valla, Linköpings universitet, Linköping, 10:15 (English)
Opponent
Supervisors
Available from: 2014-01-29 Created: 2014-01-29 Last updated: 2016-08-31Bibliographically approved

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Wingqvist, GunillaTasnadi, FerencZukauskaite, AgneBirch, JensArwin, HansHultman, Lars

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