Increased electromechanical coupling in w-ScxAl1-xN
2010 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 97, no 11, 112902- p.Article in journal (Refereed) Published
AlN is challenged as the material choice in important thin film electroacoustic devices for modern wireless communication applications. We present the promise of superior electromechanical coupling (kt2), in w−ScxAl1−xN by studying its dielectric properties. w−ScxAl1−xN (0≤x≤0.3) thin films grown by dual reactive magnetron sputtering exhibited low dielectric losses along with minor increased dielectric constant (ε). Ellipsometry measurements of the high frequency ε showed good agreement with density function perturbation calculations. Our data show that kt2 will improve from 7% to 10% by alloying AlN with up to 20 mol % ScN.
Place, publisher, year, edition, pages
2010. Vol. 97, no 11, 112902- p.
National CategoryPhysical Sciences
IdentifiersURN: urn:nbn:se:liu:diva-59839DOI: 10.1063/1.3489939ISI: 000282032900055OAI: oai:DiVA.org:liu-59839DiVA: diva2:353519
Gunilla Wingqvist, Ferenc Tasnadi, Agne Zukauskaite, Jens Birch, Hans Arwin and Lars Hultman, Increased electromechanical coupling in w-ScxAl1-xN, 2010, Applied Physics Letters, (97), 11, 112902.
Copyright: American Institute of Physics