Growth of smooth 4H-SiC epilayers on 4° off-axis substrates with chloride-based CVD at very high growth rate
2011 (English)In: Materials research bulletin, ISSN 0025-5408, E-ISSN 1873-4227, Vol. 46, no 8, 1272-1275 p.Article in journal (Refereed) Published
4H-SiC epilayers grown on 4º off-axis substrates at high rates usually suffer from step-bunching (very high surface roughness) or of extended triangular defects, both detrimental for device performance.
In this study we developed a novel in situ pre-growth surface preparation based on hydrogen chloride (HCl) addition at a temperature higher than that used for the growth. This pre-growth etching procedure minimizes the density of triangular defects which usually occur at low temperatures and simultaneously enables growth at a temperature low enough to avoid stepbunching. Thanks to this surface preparation step, chloride-based CVD could be used for rapid epitaxial growth of high quality layers. In this study, layers were grown at rates of 100 μm/h yielding defect free epitaxial layers with very smooth surface (RMS value of 8.9 Å on 100x100 μm2 area).
Place, publisher, year, edition, pages
Elsevier , 2011. Vol. 46, no 8, 1272-1275 p.
IdentifiersURN: urn:nbn:se:liu:diva-60217DOI: 10.1016/j.materresbull.2011.03.029OAI: oai:DiVA.org:liu-60217DiVA: diva2:355737
The original title of this article was "Growth of step-bunch free 4H-SiC epilayers on 4º off-axis substrates using chloride-based CVD at very high growth rate". The status of this article has changed from "Manuscript" to "Article in journal".2010-10-082010-10-082015-03-11Bibliographically approved