Microstructure evolution and age hardening in (Ti,Si)(C,N) thin films deposited by cathodic arc evaporation
2010 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 519, no 4, 1397-1403 p.Article in journal (Refereed) Published
Ti1 − xSixCyN1 − y films have been deposited by reactive cathodic arc evaporation onto cemented carbide substrates. The films were characterized by X-ray diffraction, elastic recoil detection analysis, transmission electron microscopy, energy-dispersive X-ray spectroscopy, electron-energy loss spectroscopy and nanoindentation. Reactive arc evaporation in a mixed CH4 and N2 gas gave films with 0 ≤ x ≤ 0.13 and 0≤y≤0.27. All films had the NaCl-structure with a dense columnar microstructure, containing a featherlike pattern of nanocrystalline grains for high Si and C contents. The film hardness was 32–40GPa. Films with x > 0 and y > 0 exhibited age-hardening up to 35–44 GPa when isothermally annealed up to 900 °C. The temperature threshold for over-ageing was decreased to 700 °C with increasing C and Si content, due to migration of Co, W and Cr from the substrate to the film, and loss of Si. The diffusion pathway was tied to grain boundaries provided by the featherlike substructure.
Place, publisher, year, edition, pages
2010. Vol. 519, no 4, 1397-1403 p.
Age hardening, Transmission Electron Microscopy, Thin films, TiSiCN, Arc evaporation, Mechanical properties
IdentifiersURN: urn:nbn:se:liu:diva-60522DOI: 10.1016/j.tsf.2010.08.150ISI: 000285125300024OAI: oai:DiVA.org:liu-60522DiVA: diva2:357181