Mg diffusion in Zn0.94Mg0.06O/ZnO heterostructures grown by MOCVD
(English)Manuscript (preprint) (Other academic)
Zn0.94Mg0.06O/ZnO heterostructures were grown on 2 inch sapphire wafer by MOCVD equipment. Photoluminescence mapping demonstrated that Mg uniformly distributed on the entire wafer with average concentration of ~6%. The annealing effects on the Mg diffusion behaviors were investigated by secondary ion mass spectrometry (SIMS). All Mg SIMS depth profiles were fitted by three Gaussian distribution functions. The Mg diffusion coefficient in the as-grown Zn0.94Mg0.06O layer deposited at 700 oC was two order of magnitude lower than that of annealed samples, which indicated that the deposition temperature of 700 oC is much more beneficial to grow ZnMgO/ZnO heterostructures or quantum wells.
IdentifiersURN: urn:nbn:se:liu:diva-60854OAI: oai:DiVA.org:liu-60854DiVA: diva2:359559