Ionization energy of the phosphorus donor in 3C-SiC from the donor-acceptor pair emission
2010 (English)In: JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, Vol. 108, no 6, 063532- p.Article in journal (Refereed) Published
Donor-acceptor pair luminescence of P-Al and N-Al pairs in 3C-SiC is analyzed. The structures in the spectra corresponding to recombination of pairs at intermediate distances are fitted with theoretical spectra of type I (P-Al pairs) and type II (N-Al pairs). It is shown that in the regions chosen for fitting the line positions obey the equation (h) over bar omega(R)=E-G-E-D-E-A+e(2)/epsilon R, where (h) over bar omega(R) is the energy of the photon emitted by recombination of a pair at a distance R, e is the electron charge, epsilon is the static dielectric constant, and E-G, E-D, and E-A are the electronic band gap and the donor and acceptor ionization energies, respectively. The fits yield the values E-G-E-D-E-A for the N-Al (2094 meV) and P-Al (2100.1 meV) cases. Using the known value of the nitrogen ionization energy, 54.2 meV, phosphorus ionization energy of 48.1 meV is obtained. Identification of the sharp lines corresponding to recombination of close pairs in the P-Al spectrum is suggested.
Place, publisher, year, edition, pages
American Institute of Physics , 2010. Vol. 108, no 6, 063532- p.
aluminium, energy gap, nitrogen, phosphorus, silicon compounds, wide band gap semiconductors
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-60887DOI: 10.1063/1.3487480ISI: 000282646400050OAI: oai:DiVA.org:liu-60887DiVA: diva2:359646
Ivan Gueorguiev Ivanov, Anne Henry, Fei Yan, W J Choyke and Erik Janzén, Ionization energy of the phosphorus donor in 3C-SiC from the donor-acceptor pair emission, 2010, JOURNAL OF APPLIED PHYSICS, (108), 6, 063532.
Copyright: American Institute of Physics