liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Ionization energy of the phosphorus donor in 3C-SiC from the donor-acceptor pair emission
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5768-0244
University of Pittsburgh.
University of Pittsburgh.
Show others and affiliations
2010 (English)In: JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, Vol. 108, no 6, 063532- p.Article in journal (Refereed) Published
Abstract [en]

Donor-acceptor pair luminescence of P-Al and N-Al pairs in 3C-SiC is analyzed. The structures in the spectra corresponding to recombination of pairs at intermediate distances are fitted with theoretical spectra of type I (P-Al pairs) and type II (N-Al pairs). It is shown that in the regions chosen for fitting the line positions obey the equation (h) over bar omega(R)=E-G-E-D-E-A+e(2)/epsilon R, where (h) over bar omega(R) is the energy of the photon emitted by recombination of a pair at a distance R, e is the electron charge, epsilon is the static dielectric constant, and E-G, E-D, and E-A are the electronic band gap and the donor and acceptor ionization energies, respectively. The fits yield the values E-G-E-D-E-A for the N-Al (2094 meV) and P-Al (2100.1 meV) cases. Using the known value of the nitrogen ionization energy, 54.2 meV, phosphorus ionization energy of 48.1 meV is obtained. Identification of the sharp lines corresponding to recombination of close pairs in the P-Al spectrum is suggested.

Place, publisher, year, edition, pages
American Institute of Physics , 2010. Vol. 108, no 6, 063532- p.
Keyword [en]
aluminium, energy gap, nitrogen, phosphorus, silicon compounds, wide band gap semiconductors
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-60887DOI: 10.1063/1.3487480ISI: 000282646400050OAI: oai:DiVA.org:liu-60887DiVA: diva2:359646
Note
Original Publication: Ivan Gueorguiev Ivanov, Anne Henry, Fei Yan, W J Choyke and Erik Janzén, Ionization energy of the phosphorus donor in 3C-SiC from the donor-acceptor pair emission, 2010, JOURNAL OF APPLIED PHYSICS, (108), 6, 063532. http://dx.doi.org/10.1063/1.3487480 Copyright: American Institute of Physics http://www.aip.org/ Available from: 2010-10-29 Created: 2010-10-29 Last updated: 2014-10-08

Open Access in DiVA

fulltext(258 kB)329 downloads
File information
File name FULLTEXT01.pdfFile size 258 kBChecksum SHA-512
5e7c4e32b97c6fd7338baec430a603cdcc8e2dbb2f390129337615b2b4727a5e3a9aa36efd08a5ecfd3e6510122d518a4eaecb3e2fe23c364e7f5eb5b21875b1
Type fulltextMimetype application/pdf

Other links

Publisher's full text

Authority records BETA

Ivanov, Ivan GueorguievHenry, AnneJanzén, Erik

Search in DiVA

By author/editor
Ivanov, Ivan GueorguievHenry, AnneJanzén, Erik
By organisation
Semiconductor MaterialsThe Institute of Technology
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
Total: 329 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 149 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf