Bistable defects in low-energy electron irradiated n-type 4H-SiC
2010 (English)In: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, ISSN 1862-6254, Vol. 4, no 8-9, 227-229 p.Article in journal (Refereed) Published
Epitaxial n-type 4H-SiC layers were irradiated at room temperature by low-energy electrons. During the annihilation process of the irradiation induced defects EH I and EH3, three new bistable centers, labeled EB centers, were detected in the DLTS spectrum. The reconfigurations of the EB centers (I -andgt; II and II -andgt; I) take place at room temperature with a thermal reconfiguration energy of about 0.95 eV. The threshold energy for moving the Si atom from its site in the SiC crystal structure is higher than the applied irradiation energy; therefore, the EB centers are attributed to carbon related complex defects.
Place, publisher, year, edition, pages
John Wiley and Sons, Ltd , 2010. Vol. 4, no 8-9, 227-229 p.
crystal microstructure, vacancies, defects, radiation effects, semiconductors
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-60692DOI: 10.1002/pssr.201004249ISI: 000282541400015OAI: oai:DiVA.org:liu-60692DiVA: diva2:359875