Switching Behavior of Microwave Power Transistor Studied in TCAD for Switching Class Power Amplifiers and Experimental Verification by LDMOS based Class-F Power Amplifier
2010 (English)Manuscript (preprint) (Other academic)
This paper presents a TCAD study of high speed switching behavior of RF power-transistor in class-F Power Amplifier. We utilized finite harmonics loads for achieving maximum efficiency, without external circuitry. The in house developed computational load–pull (CLP) simulation technique is further extended to investigate the odd harmonic effects of RF transistor in class-F operation. An LD-MOSFET is studied which provided 81.2 % power added efficiency (PAE) at 1 GHz. The concept is experimentally verified by fabricating a class-F PA using same transistor. In the measurement, 76 % PAE is achieved, which is close to the TCAD simulated results. TCAD is an excellent tool to study the behavior of active devices. It has an ability to enhance and optimize the performance of transistor according to system specifications before fabrication.
Place, publisher, year, edition, pages
2010. Vol. 9, no 2, 79-86 p.
Power amplifiers, class- F, switching response, LDMOS transistor, TCAD, time domain simulations
IdentifiersURN: urn:nbn:se:liu:diva-61597OAI: oai:DiVA.org:liu-61597DiVA: diva2:370558