Ti-Si-C-N Thin Films Grown by Reactive Arc Evaporation from Ti3SiC2 Cathodes
2011 (English)In: Journal of Materials Research, ISSN 0884-2914, Vol. 26, 874-881 p.Article in journal (Refereed) Published
Ti-Si-C-N thin films were deposited onto WC-Co substrates by industrial scale arc evaporation from Ti3SiC2 compound cathodes in N2 gas. Microstructure and hardness were found to be highly dependent on the wide range of film compositions attained, comprising up to 12 at.% Si and 16 at.% C. Nonreactive deposition yielded films consisting of understoichiometric TiCx, Ti and silicide phases with high (27 GPa) hardness. At a nitrogen pressure of 0.25-0.5 Pa, below that required for N saturation, superhard, 45-50 GPa, (Ti,Si)(C,N) films with a nanocrystalline feathered structure were formed. Films grown above 2 Pa displayed crystalline phases of more pronounced nitride character, but with C and Si segregated to grain boundaries to form weak grain boundary phases. In abundance of N, the combined presence of Si and C disturb cubic phase growth severely and compromises the mechanical strength of the films.
Place, publisher, year, edition, pages
Cambrdige University Press , 2011. Vol. 26, 874-881 p.
IdentifiersURN: urn:nbn:se:liu:diva-61992DOI: 10.1557/jmr.2011.10OAI: oai:DiVA.org:liu-61992DiVA: diva2:370954
Original Publication: Anders Eriksson, Jianqiang Zhu, Naureen Ghafoor, Jens Jensen, Grzegorz Greczynski, Mats Johansson, Jacob Sjölen, Magnus Odén, Lars Hultman and Johanna Rosén, Ti-Si-C-N Thin Films Grown by Reactive Arc Evaporation from Ti3SiC2 Cathodes, 2011, Journal of Materials Research, (26), 874-881. http://dx.doi.org/10.1557/jmr.2011.10 Copyright: Mrs Materials Research Society http://www.mrs.org/2010-11-182010-11-182016-08-31