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Linear polarized photoluminescence from GaN quantum dots imbedded in AlN matrix
Physics Dept, Novosibirsk.
(Physics Dept, Novosibirsk)
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
2010 (English)Conference paper, Published paper (Refereed)
Abstract [en]

We report microphotoluminescence studies of GaN/AlN quantum dots grown along the (0001) crystal axis by molecular-beam epitaxy on sapphire substrates. To obtain quantum dots with different density and size a nominal GaN coverage was varied from 1 to 4 monolayers. The highest density of quantum dots was about 1011 cm-2, so about 103 quantum dots was excited in experiments. We found that the photoluminescence intensity of a sample with the smallest amount of deposited GaN decreases in more than two orders of magnitude under continuous-wave laser exposure during about 30 minutes and then it remains stable. The photoluminescence intensity of the rest samples was time-independent quantity. The emission band of the former sample exhibits a prominent linear polarization along the growth plane. We assume that the quite high degree of polarization can be due anisotropy of strain and/or shape of the quantum dots formed near dislocations which act also as recombination centers causing photoluminescence quenching.

Place, publisher, year, edition, pages
2010. 2227-2229 p.
Identifiers
URN: urn:nbn:se:liu:diva-62206DOI: 10.1002/pssc.200983464OAI: oai:DiVA.org:liu-62206DiVA: diva2:371798
Conference
8th International Conference on Nitride Semiconductors (ICNS6), Nov 2009, Jeju, Korea
Available from: 2010-11-22 Created: 2010-11-22 Last updated: 2014-09-30

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Holtz, Per-Olof

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