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Polarized Emission from Single GaN Quantum Dot Grown by Molecular Beam Epitaxy
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology. Department of Physics, Faculty of Science, Thaksin University, 93110 Phattalung, Thailand .
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-4547-6673
Applied Semiconductor Physics, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, Sweden.
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2011 (English)Conference paper, Published paper (Refereed)
Abstract [en]

Polarization resolved microphotoluminescence measurements of single MBE‐grown GaN∕Al(Ga)N quantum dots (QDs) have been performed. The exciton and biexciton peaks with full width at half maximum as narrow as <500 μeV were observed. Interestingly, there exist both positive and negative binding energies of the biexciton, explained in term of different sizes of the measured dots, resulting in different built‐in electric field. Moreover, a strongly linearly polarized emission is observed for the investigated dots with a degree of linear polarization of about 0.9, interpreted as the valence‐band mixing induced by in‐plane anisotropy due to strain and∕or QD shape.

Place, publisher, year, edition, pages
2011. 541-542 p.
Series
AIP Conference Proceedings, ISSN 0094-243X ; vol 1399
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-62207DOI: 10.1063/1.3666493ISI: 000301053000254ISBN: 978-073541002-2 (print)OAI: oai:DiVA.org:liu-62207DiVA: diva2:371802
Conference
The 30th International Conference on the Physics of Semiconductors (ICPS30), July 2010, Seoul, Korea
Available from: 2010-11-22 Created: 2010-11-22 Last updated: 2015-01-23

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Amloy, SupaluckKarlsson, FredrikHoltz, Per-Olof

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