Polarized Emission from Single GaN Quantum Dot Grown by Molecular Beam Epitaxy
2011 (English)Conference paper (Refereed)
Polarization resolved microphotoluminescence measurements of single MBE‐grown GaN∕Al(Ga)N quantum dots (QDs) have been performed. The exciton and biexciton peaks with full width at half maximum as narrow as <500 μeV were observed. Interestingly, there exist both positive and negative binding energies of the biexciton, explained in term of different sizes of the measured dots, resulting in different built‐in electric field. Moreover, a strongly linearly polarized emission is observed for the investigated dots with a degree of linear polarization of about 0.9, interpreted as the valence‐band mixing induced by in‐plane anisotropy due to strain and∕or QD shape.
Place, publisher, year, edition, pages
2011. 541-542 p.
, AIP Conference Proceedings, ISSN 0094-243X ; vol 1399
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-62207DOI: 10.1063/1.3666493ISI: 000301053000254ISBN: 978-073541002-2OAI: oai:DiVA.org:liu-62207DiVA: diva2:371802
The 30th International Conference on the Physics of Semiconductors (ICPS30), July 2010, Seoul, Korea