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Optical characterization of InGaN quantum dots on GaN pyramids grown by MOCVD
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-4547-6673
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2010 (English)Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
2010.
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URN: urn:nbn:se:liu:diva-62209OAI: oai:DiVA.org:liu-62209DiVA: diva2:371807
Conference
The 30th International Conference on the Physics of Semiconductors (ICPS30), July 2010, Seoul, Korea
Available from: 2010-11-22 Created: 2010-11-22 Last updated: 2015-01-23

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Hsu, Chih-WeiLundskog, AndersKarlsson, FredrikForsberg, UrbanJanzén, ErikHoltz, Per-Olof

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Hsu, Chih-WeiLundskog, AndersKarlsson, FredrikForsberg, UrbanJanzén, ErikHoltz, Per-Olof
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Semiconductor MaterialsThe Institute of Technology

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CiteExportLink to record
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